M. Amimul Ihsan Electrical and RF Engineer

Resume Summary

  • Multiple years of Hands-on experience covering RFIC Design, RF System Design, Characterization on RF modules at RF Lab. And Digital Circuit Design and Layout with advanced EDA tools. Design for optimum area, power, and speed. Design for Robustness; EM, IR drop and Noise. Experience as a Technical Lead.
 
  • RF Design: Designed LNA, PA, LC Low Noise VCO. Nonlinearity aspects such as IP3, P1dB.
  • Experience in a variety of RF frequency bands. Microwave Design in GHz frequencies. Radar Systems.
  • RF Link Budget analysis using ADS for Gain, non-Linear, Noise, Harmonics.
  • RF Lab: Using Vector Network Analyzer (VNA), Spectrum Analyzer (SA), Signal Generator (SG), DMM Tested HPA, PA, LNA, Filters and U-D Converters. S21, S11, S22. Bands: VHF, UHF, L & K. -Matching Network. 
  • Project at Boeing: Worked on Solid State Power Amplifier for Linearity, Gain, Power, Heating.
 

Experience in Electronic Design. One of the challenges I faced while in up design teams was high power consumption by some of the memory circuits which were million times used in those CPUs. I redesigned and made a number of improvements in VLSI memory design with lower power designs. At Oracle, I designed and implemented Memory blocks, 64-bit dynamic shifter and 64-bit adder for floating point and graphics units (FGU). I published a paper on my new memory cell which was used thousands of times thus reducing the power consumption by almost 50X.

In high-tech, I have designed circuit high speed and at the same time with low power; this requires an in-depth knowledge as well as experience in low power circuit design. I have presented my professional work both in academia and industry to include Stanford and IBM, Oracle, Northrop. I have designed, verified and implemented low power circuits for RISC microprocessors (um) which were widely successful.

  • Electronic Design (Continued): Designed high speed memory and other circuits for leading edge microprocessors.
  • Experience with several generations of Technology; 7nm-180nm CMOS. GF-45nm, SiGe, SOI & GaN.
  • Experience with post-silicon HW debugging and failure analysis and diagnosis of digital circuits.
  • Experience with microelectronics in extreme environments (high/low temperature and etc.).
  • Extensively used Advanced EDA tools (Cadence, Synopsys, etc.): DRC/LVS/EM/NOISE/IR drop.
 
  • Comes along with leadership skills.
  • Excellent communication and documentation skills with technical presentation experience.
  • Stanford University, CA. Electrical Engineering.